october 2001 2001 fairchild semiconductor corporation fds9435a rev d 1 (w) fds9435a 30v p - channel powertrench mosfet general description this p - channel mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications requiring a wide range of ga ve drive voltage ratings (4.5v ? 25v). applications power management load switch battery protection features ? 5.3 a, ? 30 v r ds(on) = 50 m w @ v gs = ? 10 v r ds(on) = 80 m w @ v gs = ? 4.5 v low gate charge fast switching speed high performance trench techno logy for extremely low r ds(on) high power and current handling capability s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain - source voltage ? 30 v v gss gate - source voltage 25 v i d drain cu rrent ? continuous (note 1a) ? 5.3 a ? pulsed ? 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1 w t j , t stg operating and storage junction temperature range ? 55 to +175 c thermal characteristics r q ja thermal resistance, junction - to - ambient (note 1a) 50 c/w r q ja thermal resistance, junction - to - ambient (note 1c) 125 c/w r q jc thermal resistance, junction - to - case (note 1) 25 c/w package marking and ordering information device marking device ree l size tape width quantity fds9435a fds9435a 13?? 12mm 2500 units fds9435a
fds9435a rev d 1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = ? 250 m a ? 30 v d bv dss d t j breakdown voltage temperature coefficient i d = ? 250 m a, referenced to 25 c ? 23 mv/ c i dss zero gate voltage drain current v ds = ? 24 v, v gs = 0 v ? 1 m a i gssf gate ? body leakage, forward v gs = 25 v, v ds = 0 v 100 na i gssr gate ? body l eakage, reverse v gs = ? 25 v v ds = 0 v ? 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ? 250 m a ? 1 ? 1.7 ? 3 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = ? 250 m a, referenced to 25 c 4.5 mv/ c r ds(on) static drain ? source on ? resistance v gs = ? 10 v, i d = ? 5.3 a v gs = ? 4.5 v, i d = ? 4 a v gs = ? 10 v, i d = ? 5.3 a, t j =125 c 42 65 57 50 80 7 7 m w i d(on) on ? state drain current v gs = ? 10 v, v ds = ? 5 v ? 25 a g fs forward transconductance v ds = ? 5 v, i d = ? 5.3 a 10 s dynamic characteristics c iss input capacitance 528 pf c oss output capacitance 132 pf c rss reverse transfer capacitance v ds = ? 15 v, v gs = 0 v, f = 1.0 mhz 70 pf switching characteristics (note 2) t d(on) turn ? on delay time 7 14 ns t r turn ? on rise time 13 24 ns t d(off) turn ? off delay time 14 25 ns t f turn ? off fall time v dd = ? 15 v, i d = ? 1 a, v gs = ? 10 v, r gen = 6 w 9 17 ns q g total gate charge 10 14 nc q gs gate ? source charge 2.2 nc q gd gate ? drain charge v ds = ? 15 v, i d = ? 4 a, v gs = ? 10 v 2 nc dra in ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current ? 2.1 a v sd drain ? source diode forward voltage v gs = 0 v, i s = ? 2.1 a (note 2) ? 0.8 ? 1.2 v notes: 1. r q ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 50c/w when mounted on a 1in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fds9435a
fds9435a rev d 1 (w) typical characteristics 0 10 20 30 0 1 2 3 4 5 6 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -3.0v -3.5v -4.0v -4.5v v -5.0v v -6.0v 0.8 1 1.2 1.4 1.6 1.8 2 0 6 12 18 24 30 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs =-4.0v -4.5v -6.0v -7.0v -8.0v -10v -5.0v figure 1. on - region characteristics. figure 2. on - resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -5.3a v gs = -10v 0 0.05 0.1 0.15 0.2 0.25 2 4 6 8 10 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -2.8a t a = 125 o c t a = 25 o c figure 3. on - resistance variation with temperature. figure 4. on - res istance variation with gate - to - source voltage. 0 3 6 9 12 15 1 1.5 2 2.5 3 3.5 4 4.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs =0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. f ds9435a
fds9435a rev d 1 (w) typical characteristics 0 2 4 6 8 10 0 2 4 6 8 10 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -5.3a v ds = -5v -10v -15v 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 m s r ds(on) limit v gs = -10v single pulse r q ja = 125 o c/w t a = 25 o c 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maxim um power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) + r q ja r q ja = 125 o c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds9435a
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> fds9435a 30v p-channel powertrench mosfet general description back to top features back to top applications contents ? general description ? features ? applications ? product status/pricing/packaging ? order samples ? models ? qualification support this p-channel mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5v ? 25v). z -5.3 a, -30 v { r ds(on) = 50 m ? @ v gs = -10 v { r ds(on) = 80 m ? @ v gs = - 4.5 v. z low gate charge z fast switch ing speed z high density cell design for extremely low r ds(on) . z high power and current handling capability z power management z load switch z battery protection datasheet download this datasheet e - mail this datasheet this page print version this product use in fetbench a nalysis related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchil d p/n fds9435a - 30v p-ch annel powertrench mosfet 17-au g -2007 mhtml:file://c:\temp\fds9435a _ nf073.mht
product status/pricing/packaging back to top models back to top qualification support click on a product for detailed qualification data back to top back to top product product status pb-free status pricing* package type leads packing method package marking convention** fds9435a full production $0.393 so - 8 8 tape reel line 1: $y (fairchild logo) & z (asm. plant code) & 2 (2-digit date code) & t (die trace code) line 2: fds line 3: 9435a * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fds9435a is available. click here for more information . package & leads condition temperature range software version revision date pspice so-8-8 electrical 25c to 125c orcad 9.1 oct 2, 2003 product fds9435a ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchil d p/n fds9435a - 30v p-ch annel powertrench mosfet 17-au g -2007 mhtml:file://c:\temp\fds9435a _ nf073.mht
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